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IRFP4227PBF MOSFET Module

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IRFP4227PBF MOSFET Module
  • IRFP4227PBF MOSFET Module
  • IRFP4227PBF MOSFET Module
  • IRFP4227PBF MOSFET Module
  • IRFP4227PBF MOSFET Module
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Approx. Rs 319.09 / PieceGet Latest Price

Product Details:
Minimum Order Quantity100 Piece
Voltage220-240 V
BrandInfineon Technologies
Part NumberIRFP4227PBF
Transistor TypeNPN
Mounting Typethrough hole
Current330 W
Voltage- 30 V, + 30 V
Gate Charge (Qg)70 NC
Drain Source Resistance200 V
Maximum Operating Temperature+ 175 C
Maximum Power Dissipation330 W
Pin Count3

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MOSFET MOSFT 200V 65A 25mOhm 70nC Qg

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  • Delivery Time: 2 weeks
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    IRF3710PBF MOSFET Transistor

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    IRF3710PBF MOSFET Transistor
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    Approx. Rs 140 / PieceGet Latest Price

    Product Details:
    Channel TypeP Channel
    BrandIndus Technologies
    Transistor TypeNPN
    Voltage240V
    Maximum Operating Frequency50Hz
    Country of OriginMade in India

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    RT9293BGJ6 LED Driver IC

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    RT9293BGJ6 LED Driver IC
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    Approx. Rs 127 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Total outputs1
    Number Of Pins28 Pins
    Model NumberRT9293BGJ6
    Why do you need thisFor Reselling
    Pack SizeSOT-23-6 Thin, TSOT-23-6
    BrandIndus
    Country of OriginMade in India

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    LED Driver IC 1 Output DC DC Regulator Step-Up (Boost) PWM Dimming 1.2A (Switch) TSOT-23-6


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  • Delivery Time: 2 weeks
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    IPA65R380C6 MOSFET N-Ch 700V 10.6A TO220FP-3 CoolMOS C6

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    IPA65R380C6 MOSFET N-Ch 700V 10.6A TO220FP-3 CoolMOS C6
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    • IPA65R380C6 MOSFET N-Ch 700V 10.6A TO220FP-3 CoolMOS C6
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    Approx. Rs 500 / PieceGet Latest Price

    Product Details:
    Voltage100 V
    TypeIPA65R380C6 Power Diode
    ColorBlack and Silver
    ModelIPA65R380C6
    BrandIndus
    Country of OriginMade in India

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    STP80NF55 MOSFET LGS LV MOSFET

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    STP80NF55   MOSFET LGS LV MOSFET
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    Approx. Rs 200 / PieceGet Latest Price

    Product Details:
    Usage/ApplicationElectronics
    TypeNon-Leaded
    Model NoSTP80NF55
    Operating Tempracture-40 DegreeC ~ 85 DegreeC (TA)
    ManufacturerST Microelectronics
    Packaging TypeBox
    ColourBlack
    Type Of MountingThrough Hole
    Country of OriginMade in India

    MOSFET N-CH 55V 80A TO220AB
    N-Channel 55 V 80A (Tc) 300W (Tc) Through Hole TO-220
    FET Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 55 V
    Current - Continuous Drain (Id) @ 25°C 80A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V
    Vgs(th) (Max) @ Id 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
    Vgs (Max) ±20V
    Input Capacitance (Ciss) (Max) @ Vds 3850 pF @ 25 V
    FET Feature -
    Power Dissipation (Max) 300W (Tc)
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Supplier Device Package TO-220
    Package / Case TO-220-3
    Base Product Number STP80
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    STN1HNK60 MOSFET N-CH 600V 400MA SOT223

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    STN1HNK60 MOSFET N-CH 600V 400MA SOT223
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    Approx. Rs 91.72 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Voltage110-120 V
    BrandSTMicroelectronics
    Part NumberSTN1HNK60
    Transistor TypeNPN
    Mounting TypeSMD
    Current400 mA
    Maximum Operating Frequency- 55 C
    Maximum Operating Temperature- 55 C
    Country of OriginMade in India

      Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package/Case: SOT-223-4 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 400 mA Rds On - Drain-Source Resistance: 8.5 Ohms Vgs - Gate-Source Voltage: - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage: 2.25 V Qg - Gate Charge: 7 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.3 W Channel Mode: Enhancement Tradename: SuperMESH Series: STN1HNK60 Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: STMicroelectronics Configuration: Single Fall Time: 25 ns Height: 1.8 mm Length: 6.5 mm Product Type: MOSFET Rise Time: 5 ns 4000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 19 ns Typical Turn-On Delay Time: 6.5 ns Width: 3.5 mm Unit Weight: 250 mg

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  • Delivery Time: 2 weeks
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    STN1HNK60T4 MOSFET 600V 8Ohm 1A N-Chnnl Zener SuperMESH

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    Approx. Rs 39 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    VoltageAbove 480
    Brand- 25 V, + 25 V
    Part NumberSTN1HNK60T4-TR
    Transistor TypeNPN
    Mounting TypeSMD
    Current400 mA
    Voltage- 25 V, + 25 V
    Gate Charge (Qg)7 nC
    Drain Source Resistance8.5 Ohms

    Case/PackageSOT-223MountSurface MountNumber of Pins3TechnicalContinuous Drain Current (ID)400 mACurrent Rating400 mADrain to Source Breakdown Voltage600 VDrain to Source Resistance8 ΩDrain to Source Voltage (Vdss)600 VElement ConfigurationSingleFall Time25 nsGate to Source Voltage (Vgs)30 VInput Capacitance156 pFMax Junction Temperature (Tj)150 °CMax Operating Temperature150 °CMax Power Dissipation3.3 WMin Operating Temperature-55 °CNominal Vgs3 VNumber of Channels1Number of Elements1PackagingCut TapePower Dissipation3.3 WRds On Max8.5 ΩResistance8.5 ΩRise Time5 nsSchedule B8541290080Threshold Voltage3 VTurn-Off Delay Time19 nsTurn-On Delay Time6.5 nsVoltage Rating (DC)600 VDimensionsHeight1.8 mmLength6.5 mmWidth3.5 mmAlso See

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  • Delivery Time: 2 weeks
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    IRF830PBF - MOSFET 100V N-CH HEXFET

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    IRF830PBF - MOSFET 100V N-CH HEXFET
    • IRF830PBF - MOSFET 100V N-CH HEXFET
    • IRF830PBF - MOSFET 100V N-CH HEXFET
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    Approx. Rs 110 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Voltage100V
    BrandVishay Semiconductors
    Part NumberIRF530PBF
    Transistor TypeNPN
    Mounting TypeDIP
    Current14 A
    Gate Charge (Qg)- 20 V, + 20 V
    Drain Source Resistance100 V
    Maximum Operating Temperature+ 175 C
    Maximum Power Dissipation88 W
    Pin Count3

    Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 14 A Rds On - Drain-Source Resistance: 160 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 26 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 88 W Channel Mode: Enhancement Series: IRF Packaging: Tube Brand: Vishay Semiconductors Configuration: Single Fall Time: 24 ns Product Type: MOSFET Rise Time: 34 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 23 ns Typical Turn-On Delay Time: 10 ns Part # Aliases: IRF530PBF-BE3 IRF520SPBF Unit Weight: 2 g

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  • Delivery Time: 2- 3 weeks
  • Packaging Details: cut tape - box
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    BSH111BKR - SMD MOSFET

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    BSH111BKR  - SMD MOSFET
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    • BSH111BKR  - SMD MOSFET
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    Approx. Rs 25 / PieceGet Latest Price

    Product Details:
    Usage/ApplicationElectronics
    Mounting TypeSMD
    TypeNon-Leaded
    Gate Charge (Qg) (Max) @ Vgs0.5 nC @ 4.5 V
    Power Dissipation (Max)302mW (Ta)
    Drain to Source Voltage (Vdss)55 V
    Current - Continuous Drain (Id) @ 25 DegreeC210mA (Ta)
    Vgs (Max)+-10V
    ManufacturerNexperia USA Inc.
    Fet TypeN-Channel
    Operating Temperature-55 DegreeC ~ 150 DegreeC (TJ)
    Model NoBSH111BKR
    Drive Voltage (Max Rds On, Min Rds On)4.5V
    Country of OriginMade in India

    N-Channel 55 V 210mA (Ta) 302mW (Ta) Surface Mount TO-236AB
    FET Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 55 V
    Current - Continuous Drain (Id) @ 25°C 210mA (Ta)
    Drive Voltage (Max Rds On, Min Rds On) 4.5V
    Rds On (Max) @ Id, Vgs 4Ohm @ 200mA, 4.5V
    Vgs(th) (Max) @ Id 1.3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 0.5 nC @ 4.5 V
    Vgs (Max) ±10V
    Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 30 V
    FET Feature -
    Power Dissipation (Max) 302mW (Ta)
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Supplier Device Package TO-236AB
    Package / Case TO-236-3, SC-59, SOT-23-3
    Base Product Number BSH111
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    TK10A80E,S4X MOSFET PLN MOS

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    TK10A80E,S4X MOSFET PLN MOS
    • TK10A80E,S4X MOSFET PLN MOS
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    Approx. Rs 65 / PieceGet Latest Price

    Product Details:
    Usage/ApplicationElectronics
    TypeNon-Leaded
    Packaging TypeBox
    ColourBlack
    Type Of MountingThrough Hole
    Power Dissipation (Max)50W (Tc)
    TechnologyMOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)800 V
    FET TypeN-Channel
    Model NoTK10A80E,S4X
    ManufracturerToshiba Semiconductor and Storage
    Operating Temperature150 DegreeC (TJ)
    Country of OriginMade in India

    MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
    Technology:Si
    Mounting Style:Through Hole
    Package/Case:TO-220FP-3
    Transistor Polarity:N-Channel
    Number of Channels:1 Channel
    Vds - Drain-Source Breakdown Voltage:800 V
    Id - Continuous Drain Current:10 A
    Rds On - Drain-Source Resistance:700 mOhms
    Vgs - Gate-Source Voltage:- 30 V, + 30 V
    Vgs th - Gate-Source Threshold Voltage:4 V
    Qg - Gate Charge:46 nC
    Minimum Operating Temperature:- 55 C
    Maximum Operating Temperature:+ 150 C
    Pd - Power Dissipation:50 W
    Channel Mode:Enhancement
    Tradename:MOSVIII
    Series:TK10A80E
    Packaging:Tube
    Brand:Toshiba
    Configuration:Single
    Fall Time:35 ns
    Height:15 mm
    Length:10 mm
    Product Type:MOSFET
    Rise Time:40 ns
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    IRF3205SPBF -MOSFET MODULE

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    IRF3205SPBF -MOSFET  MODULE
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    Approx. Rs 35 / PieceGet Latest Price

    Product Details:
    Usage/ApplicationElectronics
    TypeNon-Leaded
    ManufracturerInfineon Technologies
    Vgs (Max)+-20V
    FET TypeN-Channel
    ColourBlack
    Drain to Source Voltage (Vdss)55 V
    Operating Temperature-55 DegreeC ~ 175 DegreeC (TJ)
    Type Of MountingSurface Mount
    Packaging TypeBox
    Model NoIRF3205SPBF
    Power Dissipation (Max)200W (Tc)
    Country of OriginMade in India

    N-Channel 55 V 110A (Tc) 200W (Tc) Surface Mount D2PAK
    MOSFET N-CH 55V 110A D2PAK
    Product Status Discontinued at Digi-Key
    FET Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 55 V
    Current - Continuous Drain (Id) @ 25°C 110A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Rds On (Max) @ Id, Vgs 8mOhm @ 62A, 10V
    Vgs(th) (Max) @ Id 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 146 nC @ 10 V
    Vgs (Max) ±20V
    Input Capacitance (Ciss) (Max) @ Vds 3247 pF @ 25 V
    FET Feature -
    Power Dissipation (Max) 200W (Tc)
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Surface Mount
    Supplier Device Package D2PAK
    Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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    2SJ177-VB - VBSEMI - MOSFET

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    2SJ177-VB - VBSEMI - MOSFET
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    Approx. Rs 350 / pieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 piece
    Forward Voltage1.4V
    Voltage110-120 V
    BrandVBsemi Elec
    Part Number2SJ177-VB
    Transistor TypePNP
    Mounting TypeDIP
    Current2.5V@250uA
    I Deal InNew Only

    The 2SJ177 parts manufactured by HITACHI are available for purchase at Jotrin Electronics. Here you can find various types and values ​​of electronic parts from the world's leading manufacturers. The 2SJ177 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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  • Delivery Time: 2 weesk
  • Packaging Details: cut tape - box
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    AOD409 -PNP MOSFET

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    AOD409 -PNP MOSFET
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    Approx. Rs 150 / PieceGet Latest Price

    Product Details:
    Usage/ApplicationElectronics
    Mounting TypeSMD
    TypeNon-Leaded
    Operating Temperature-55 DegreeC ~ 175 DegreeC (TJ)
    ColourBlack
    ManufacturerAlpha & Omega Semiconductor Inc.
    Vgs (Max)+-20V
    Drive Voltage (Max Rds On, Min Rds On)10V
    Power Dissipation (Max)2.5W (Ta), 60W (Tc)
    Model NoAOD409
    TechnologyMOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss)60 V
    Country of OriginMade in India

    Product Status Active
    FET Type P-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 60 V
    Current - Continuous Drain (Id) @ 25°C 26A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
    Rds On (Max) @ Id, Vgs 40mOhm @ 20A, 10V
    Vgs(th) (Max) @ Id 2.4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
    Vgs (Max) ±20V
    Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 30 V
    FET Feature -
    Power Dissipation (Max) 2.5W (Ta), 60W (Tc)
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Surface Mount
    Supplier Device Package TO-252 (DPAK)
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    NVTFS5116PLWFTAG Power MOSFET Module

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    NVTFS5116PLWFTAG Power MOSFET Module
    • NVTFS5116PLWFTAG Power MOSFET Module
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    Approx. Rs 100 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    BrandIndus
    Part NumberNVTFS5116PLWFTAG
    Transistor TypeNPN
    Mounting TypeSMD
    Voltage3 V
    Gate Charge (Qg)25 nC
    Drain Source Resistance52 mOhms

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    MOSFET Pwr MOSFET 60V 14A 52mOhm SGL P-CH

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  • Delivery Time: 2 WEEKS
  • Packaging Details: Reel - Cut Tape - Mouse Reel
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    SI2301CDS-T1-GE3 - MOSFET

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    SI2301CDS-T1-GE3 - MOSFET
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    Approx. Rs 35 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    BrandVishay Semiconductors
    Part NumberSI2301CDS-T1-GE3
    Transistor TypePNP
    Mounting TypeSMD
    Current3.1 A
    Gate Charge (Qg)1 V
    Drain Source Resistance20 V
    Maximum Operating Temperature+ 150 C
    Maximum Power Dissipation1.6 W
    Pin Count3

    Technology: Si Mounting Style: SMD/SMT Package/Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 3.1 A Rds On - Drain-Source Resistance: 112 mOhms Vgs - Gate-Source Voltage: - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 3.3 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.6 W Channel Mode: Enhancement Tradename: TrenchFET Series: SI2 Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: Vishay Semiconductors Configuration: Single Fall Time: 10 ns Product Type: MOSFET Rise Time: 35 ns 3000 Subcategory: MOSFETs Transistor Type: 1 P-Channel Typical Turn-Off Delay Time: 30 ns Typical Turn-On Delay Time: 11 ns Part # Aliases: SI2301CDS-T1-BE3 SI2301CDS-GE3 Unit Weight: 8 mg

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  • Delivery Time: 2 -3 weeks
  • Packaging Details: Cut tape - Reel - Box
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    IRFB4115PBF -MOSFT 150V 104A 11mOhm 77nC Qg

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    Approx. Rs 300 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Channel TypeN Channel
    BrandInfineon Technologies
    Part NumberIRFB4115PBF
    Transistor TypeNPN
    Maximum Gate Source VoltageInfineon Technologies
    Maximum Continuous Drain Current104 A
    Mounting TypeThrough Hole
    Voltage5 V
    Maximum Drain Source Resistance9.3 mOhms

    Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 150 V Id - Continuous Drain Current: 104 A Rds On - Drain-Source Resistance: 9.3 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 5 V Qg - Gate Charge: 77 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 380 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon Technologies Configuration: Single Fall Time: 39 ns Forward Transconductance - Min: 97 S Height: 15.65 mm Length: 10 mm Product Type: MOSFET Rise Time: 73 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 41 ns Typical Turn-On Delay Time: 18 ns Width: 4.4 mm Unit Weight: 2 g

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  • Production Capacity: Depends on order value
  • Delivery Time: 2 -3 weeks
  • Packaging Details: Cut tape - Tube - Box
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    IRF740APBF - MOSFET 400V N-CH HEXFET

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    IRF740APBF - MOSFET	400V N-CH HEXFET
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    Approx. Rs 195 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Channel TypeN Channel
    BrandVishay Semiconductors
    Part NumberIRF740APBF
    Maximum Gate Source Voltage+ 30 V
    Transistor TypeNPN
    Maximum Continuous Drain Current10 A
    Mounting TypeThrough Hole
    Current10 A
    Voltage4 V
    Maximum Drain Source Resistance550 mOhms

    Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 400 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 550 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 36 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Channel Mode: Enhancement Series: IRF Packaging: Tube Brand: Vishay Semiconductors Configuration: Single Fall Time: 22 ns Product Type: MOSFET Rise Time: 35 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 24 ns Typical Turn-On Delay Time: 10 ns Part # Aliases: IRF740APBF-BE3 Unit Weight: 2 g

    Additional Information:

  • Production Capacity: Depends on order value
  • Delivery Time: 2 -3 weeks
  • Packaging Details: Cut tape - tube - box
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    MAX5715BAUD+T Analog Converters

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    MAX5715BAUD+T Analog Converters
    • MAX5715BAUD+T Analog Converters
    • MAX5715BAUD+T Analog Converters
    • MAX5715BAUD+T Analog Converters
    • MAX5715BAUD+T Analog Converters
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    Approx. Rs 840.05 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Power50 W
    PhaseSingle Phase
    Input Voltage2.7 V to 5.5 V
    Usage/ApplicationIndustrial
    Output Voltage1.8 V to 5.5 V
    Model Name/NumberMAX5715BAUD+T

    • Digital to Analog Converters - DAC Ultra-Small, Quad-Channel, 8-/10-/12-Bit Buffered Output DACs with Internal Reference and SPI Interface

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  • Production Capacity: Depends on ordre value
  • Delivery Time: 2 weeks
  • Packaging Details: Reel Cut Tape Mouse Reel
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    MAX6126A50+T Voltage Calibrator

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    MAX6126A50+T Voltage Calibrator
    • MAX6126A50+T Voltage Calibrator
    • MAX6126A50+T Voltage Calibrator
    • MAX6126A50+T Voltage Calibrator
    • MAX6126A50+T Voltage Calibrator
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    Approx. Rs 6,910.90 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Model Name/NumberMAX6126A50+T
    Display TypeAnalog
    Usage/ApplicationIndustrial
    TypeSeries Precision References
    Accuracy0.06 %
    Temperature Range+ 125 C

    We are engaged in offering a wide range of Indus Technologiesto our clients. Our range of all products is widely appreciated by our clients

    Voltage References Ultra-High-Precision, Ultra-Low-Noise, Series Voltage Reference

    Additional Information:

  • Production Capacity: Depends on order value
  • Delivery Time: 2 weeks
  • Packaging Details: Reel Cut Tape Mouse Reel
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    IXDN630CI Gate Drivers 12.5V 5-PIN TO-220 MOSFET DRIVER

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    IXDN630CI Gate Drivers 12.5V 5-PIN TO-220 MOSFET DRIVER
    • IXDN630CI Gate Drivers 12.5V 5-PIN TO-220 MOSFET DRIVER
    • IXDN630CI Gate Drivers 12.5V 5-PIN TO-220 MOSFET DRIVER
    • IXDN630CI Gate Drivers 12.5V 5-PIN TO-220 MOSFET DRIVER
    • IXDN630CI Gate Drivers 12.5V 5-PIN TO-220 MOSFET DRIVER
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    Approx. Rs 100 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Mounting TypeThrough Hole
    Colorblack
    Number of Drivers:1 Driver
    Output Current:30 A
    Supply Voltage - Max35 V
    Configuration:Non-Inverting
    Package/Case:TO-220-5

    Product: MOSFET Gate Drivers Type: Low-Side Mounting Style: Through Hole Package/Case: TO-220-5 Number of Drivers: 1 Driver Number of Outputs: 1 Output Output Current: 30 A Supply Voltage - Min: 12.5 V Supply Voltage - Max: 35 V Configuration: Non-Inverting Rise Time: 11 ns Fall Time: 11 ns Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 125 C Series: IXD_630 Packaging: Tube Brand: IXYS Integrated Circuits Maximum Turn-Off Delay Time: 100 ns Maximum Turn-On Delay Time: 100 ns Operating Supply Current: 10 uA Output Voltage: 12.5 V Product Type: Gate Drivers 50 Subcategory: PMIC - Power Management ICs Technology: Si Tradename: Clare Unit Weight: 3 g

    Additional Information:

  • Production Capacity: depends on order value
  • Delivery Time: 2 weeks
  • Packaging Details: tray-box-bag - cut tape
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