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IRFP4227PBF MOSFET Module

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IRFP4227PBF MOSFET Module
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Approx. Rs 315 / PieceGet Latest Price

Product Details:
Minimum Order Quantity100 Piece
BrandInfineon Technologies
Part NumberIRFP4227PBF
Transistor TypeNPN
Mounting Typethrough hole
Current330 W
Voltage220-240 V,- 30 V, + 30 V
Gate Charge (Qg)70 NC
Drain Source Resistance200 V
Maximum Operating Temperature+ 175 C
Maximum Power Dissipation330 W
Pin Count3

Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 65 A Rds On - Drain-Source Resistance: 25 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 1.8 V Qg - Gate Charge: 70 nC Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 330 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon Technologies Configuration: Single Fall Time: 31 ns Forward Transconductance - Min: 49 S Height: 20.7 mm Length: 15.87 mm Product Type: MOSFET Rise Time: 20 ns 400 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 21 ns Typical Turn-On Delay Time: 33 ns Width: 5.31 mm Unit Weight: 6 g

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  • Delivery Time: 2 weeks
  • Packaging Details: Reel Cut Tape MouseReel
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    AOD409 -PNP MOSFET

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    Approx. Rs 150 / PieceGet Latest Price

    Product Details:
    Mounting TypeSMD
    Usage/ApplicationElectronics
    TypeNon-Leaded
    Operating Temperature-55 DegreeC ~ 175 DegreeC (TJ)
    ManufacturerAlpha & Omega Semiconductor Inc.
    Drain to Source Voltage (Vdss)60 V
    Power Dissipation (Max)2.5W (Ta), 60W (Tc)
    ColourBlack
    Model NoAOD409
    TechnologyMOSFET (Metal Oxide)
    Drive Voltage (Max Rds On, Min Rds On)10V
    Vgs (Max)+-20V

    Product Status Active
    FET Type P-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 60 V
    Current - Continuous Drain (Id) @ 25°C 26A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
    Rds On (Max) @ Id, Vgs 40mOhm @ 20A, 10V
    Vgs(th) (Max) @ Id 2.4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
    Vgs (Max) ±20V
    Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 30 V
    FET Feature -
    Power Dissipation (Max) 2.5W (Ta), 60W (Tc)
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Surface Mount
    Supplier Device Package TO-252 (DPAK)
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    STW13NK100Z - POWER MOSFET

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    Approx. Rs 75 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    BrandST
    Part NumberSTW11NK100Z STW13NK100Z
    Transistor TypeNPN
    Mounting TypeThrough hole
    Current13 A
    Linear Derating Factor2.7
    Gate Charge (Qg)-/+ 30
    Drain Source Resistance0.56
    Maximum Operating Temperature300
    Pin Count3

    The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

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  • Delivery Time: 2 - 3 weeks
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    IRF740APBF - MOSFET

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    Approx. Rs 195 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Channel TypeN Channel
    BrandVishay Semiconductors
    Part NumberIRF740APBF
    Transistor TypeNPN
    Maximum Gate Source Voltage+ 30 V
    Maximum Continuous Drain Current10 A
    Current10 A
    Mounting TypeThrough Hole
    Voltage4 V
    Maximum Drain Source Resistance550 mOhms

    Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 400 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 550 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 36 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Channel Mode: Enhancement Series: IRF Packaging: Tube Brand: Vishay Semiconductors Configuration: Single Fall Time: 22 ns Product Type: MOSFET Rise Time: 35 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 24 ns Typical Turn-On Delay Time: 10 ns Part # Aliases: IRF740APBF-BE3 Unit Weight: 2 g

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  • Delivery Time: 2 -3 weeks
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    TBD139 TO126 12.5W - Transistor

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    Approx. Rs 35.00 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Channel TypeN Channel
    BrandSTMicroelectronics
    Part NumberThrough Hole
    Transistor TypeNPN
    Current1.5 A
    Voltage80 V

    Bipolar Transistors - BJT NPN Silicon Trnsistr
    Manufacturer CDIL
    Type of transistor NPN
    Polarisation bipolar
    Collector-emitter voltage 80V
    Collector current 1.5A
    Power dissipation 12.5W
    Case TO126
    Current gain 40...250
    Mounting THT
    Kind of package tube



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  • Delivery Time: 2 weeks
  • Packaging Details: Reel Cut Tape Mouse Reel
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    TK10A80E, S4X- MOSFET

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    Approx. Rs 65 / PieceGet Latest Price

    Product Details:
    Usage/ApplicationElectronics
    TypeNon-Leaded
    TechnologyMOSFET (Metal Oxide)
    Model NoTK10A80E,S4X
    FET TypeN-Channel
    Power Dissipation (Max)50W (Tc)
    Drain to Source Voltage (Vdss)800 V
    ColourBlack
    Type Of MountingThrough Hole
    Operating Temperature150 DegreeC (TJ)
    ManufracturerToshiba Semiconductor and Storage
    Packaging TypeBox
    Country of OriginMade in India

    MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS
    Technology:Si
    Mounting Style:Through Hole
    Package/Case:TO-220FP-3
    Transistor Polarity:N-Channel
    Number of Channels:1 Channel
    Vds - Drain-Source Breakdown Voltage:800 V
    Id - Continuous Drain Current:10 A
    Rds On - Drain-Source Resistance:700 mOhms
    Vgs - Gate-Source Voltage:- 30 V, + 30 V
    Vgs th - Gate-Source Threshold Voltage:4 V
    Qg - Gate Charge:46 nC
    Minimum Operating Temperature:- 55 C
    Maximum Operating Temperature:+ 150 C
    Pd - Power Dissipation:50 W
    Channel Mode:Enhancement
    Tradename:MOSVIII
    Series:TK10A80E
    Packaging:Tube
    Brand:Toshiba
    Configuration:Single
    Fall Time:35 ns
    Height:15 mm
    Length:10 mm
    Product Type:MOSFET
    Rise Time:40 ns
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    BSH111BKR - SMD MOSFET

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    Approx. Rs 25 / PieceGet Latest Price

    Product Details:
    Mounting TypeSMD
    Usage/ApplicationElectronics
    TypeNon-Leaded
    Gate Charge (Qg) (Max) @ Vgs0.5 nC @ 4.5 V
    ManufacturerNexperia USA Inc.
    Drain to Source Voltage (Vdss)55 V
    Current - Continuous Drain (Id) @ 25 DegreeC210mA (Ta)
    Power Dissipation (Max)302mW (Ta)
    Fet TypeN-Channel
    Vgs (Max)+-10V
    Operating Temperature-55 DegreeC ~ 150 DegreeC (TJ)
    Drive Voltage (Max Rds On, Min Rds On)4.5V
    Model NoBSH111BKR

    N-Channel 55 V 210mA (Ta) 302mW (Ta) Surface Mount TO-236AB
    FET Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 55 V
    Current - Continuous Drain (Id) @ 25°C 210mA (Ta)
    Drive Voltage (Max Rds On, Min Rds On) 4.5V
    Rds On (Max) @ Id, Vgs 4Ohm @ 200mA, 4.5V
    Vgs(th) (Max) @ Id 1.3V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 0.5 nC @ 4.5 V
    Vgs (Max) ±10V
    Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 30 V
    FET Feature -
    Power Dissipation (Max) 302mW (Ta)
    Operating Temperature -55°C ~ 150°C (TJ)
    Mounting Type Surface Mount
    Supplier Device Package TO-236AB
    Package / Case TO-236-3, SC-59, SOT-23-3
    Base Product Number BSH111
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    IRF830PBF - MOSFET

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    Approx. Rs 110 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Voltage100V
    BrandVishay Semiconductors
    Part NumberIRF530PBF
    Transistor TypeNPN
    Mounting TypeDIP
    Current14 A
    Gate Charge (Qg)- 20 V, + 20 V
    Drain Source Resistance100 V
    Maximum Operating Temperature+ 175 C
    Maximum Power Dissipation88 W
    Pin Count3

    Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 14 A Rds On - Drain-Source Resistance: 160 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 26 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 88 W Channel Mode: Enhancement Series: IRF Packaging: Tube Brand: Vishay Semiconductors Configuration: Single Fall Time: 24 ns Product Type: MOSFET Rise Time: 34 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 23 ns Typical Turn-On Delay Time: 10 ns Part # Aliases: IRF530PBF-BE3 IRF520SPBF Unit Weight: 2 g

    Additional Information:

  • Production Capacity: Depends on order value
  • Delivery Time: 2- 3 weeks
  • Packaging Details: cut tape - box
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    STP80NF55 MOSFET LGS LV MOSFET

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    Approx. Rs 200 / PieceGet Latest Price

    Product Details:
    Usage/ApplicationElectronics
    TypeNon-Leaded
    ColourBlack
    Type Of MountingThrough Hole
    Packaging TypeBox
    Operating Tempracture-40 DegreeC ~ 85 DegreeC (TA)
    ManufacturerST Microelectronics
    Model NoSTP80NF55

    MOSFET N-CH 55V 80A TO220AB
    N-Channel 55 V 80A (Tc) 300W (Tc) Through Hole TO-220
    FET Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 55 V
    Current - Continuous Drain (Id) @ 25°C 80A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V
    Vgs(th) (Max) @ Id 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
    Vgs (Max) ±20V
    Input Capacitance (Ciss) (Max) @ Vds 3850 pF @ 25 V
    FET Feature -
    Power Dissipation (Max) 300W (Tc)
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Through Hole
    Supplier Device Package TO-220
    Package / Case TO-220-3
    Base Product Number STP80
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    IRF3205SPBF -MOSFET MODULE

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    Approx. Rs 35 / PieceGet Latest Price

    Product Details:
    Usage/ApplicationElectronics
    TypeNon-Leaded
    ColourBlack
    Drain to Source Voltage (Vdss)55 V
    ManufracturerInfineon Technologies
    Packaging TypeBox
    FET TypeN-Channel
    Operating Temperature-55 DegreeC ~ 175 DegreeC (TJ)
    Type Of MountingSurface Mount
    Vgs (Max)+-20V
    Power Dissipation (Max)200W (Tc)
    Model NoIRF3205SPBF

    N-Channel 55 V 110A (Tc) 200W (Tc) Surface Mount D2PAK
    MOSFET N-CH 55V 110A D2PAK
    Product Status Discontinued at Digi-Key
    FET Type N-Channel
    Technology MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) 55 V
    Current - Continuous Drain (Id) @ 25°C 110A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) 10V
    Rds On (Max) @ Id, Vgs 8mOhm @ 62A, 10V
    Vgs(th) (Max) @ Id 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs 146 nC @ 10 V
    Vgs (Max) ±20V
    Input Capacitance (Ciss) (Max) @ Vds 3247 pF @ 25 V
    FET Feature -
    Power Dissipation (Max) 200W (Tc)
    Operating Temperature -55°C ~ 175°C (TJ)
    Mounting Type Surface Mount
    Supplier Device Package D2PAK
    Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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    HFS5N65SA - Transister Mosfet

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    Approx. Rs 45 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Channel TypeN Channel
    Part NumberHFS5N65S
    Transistor TypeNPN
    Mounting TypeThrough hole
    Current4.2 A
    Voltage650 V
    Maximum Gate Source Voltage30 V
    Maximum Continuous Drain Current4.2 A
    Maximum Drain Source Resistance2.9 Ohm
    Maximum Operating Temperature150 DegreeC
    Pin Count4

    Type Designator: HFS5N65S
    Type of Transistor: MOSFET
    Type of Control Channel: N -Channel
    Maximum Power Dissipation (Pd): 33 W
    Maximum Drain-Source Voltage |Vds|: 650 V
    Maximum Gate-Source Voltage |Vgs|: 30 V
    Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
    Maximum Drain Current |Id|: 4.2 A
    Maximum Junction Temperature (Tj): 150 °C
    Total Gate Charge (Qg): 10.5 nC
    Rise Time (tr): 45 nS
    Drain-Source Capacitance (Cd): 60 pF
    Maximum Drain-Source On-State Resistance (Rds): 2.9 Ohm

    Additional Information:

  • Production Capacity: Depends on order value
  • Delivery Time: 2 -3 weeks
  • Packaging Details: Cut tape - Reel- Tube - Box
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    RQJ0303PGDQA - MOSFET Power MOSFET

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    Approx. Rs 15 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    BrandRenesas Electronics
    Part NumberRQJ0303PGDQA#H6
    Mounting TypeSMD
    Pin Count2
    Package/Case:SC-59-3
    Mounting Style:SMD/SMT
    Subcategory:MOSFETs
    Width:2.95 mm
    Brand:Renesas Electronics
    Unit Weight:6 mg
    Height:1.4 mm
    Length:1.5 mm
    Moisture Sensitive:Yes

    Manufacturer: Renesas Electronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package/Case: SC-59-3 Packaging: Reel Packaging: Cut Tape Brand: Renesas Electronics Height: 1.4 mm Length: 1.5 mm Moisture Sensitive: Yes Product Type: MOSFET 3000 Subcategory: MOSFETs Width: 2.95 mm Unit Weight: 6 mg

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  • Delivery Time: 2 -3 weeks
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    IRFB260NPBF - MOSFET

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    Approx. Rs 131 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Voltage220V
    BrandInfineon Technologies
    Part NumberIRFB260NPBF
    Transistor TypeNPN
    Mounting TypeTHROUGH HOLE
    Current56 A
    Gate Charge (Qg)150 nC
    Drain Source Resistance40 mOhms

    Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 56 A Rds On - Drain-Source Resistance: 40 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.8 V Qg - Gate Charge: 150 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 380 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon Technologies Configuration: Single Fall Time: 50 ns Forward Transconductance - Min: 29 S Height: 15.65 mm Length: 10 mm Product Type: MOSFET Rise Time: 64 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 52 ns Typical Turn-On Delay Time: 17 ns Width: 4.4 mm Unit Weight: 2 g

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  • Delivery Time: 2 -3 weeks
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    IRFB20N50KPBF - MOSFET

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    Approx. Rs 201 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Vgs - Gate-Source Voltage: - 30- 30 V, + 30 V
    Maximum Operating Temperature:+ 150 C
    Transistor Polarity:N-Channel
    Number of Channels:1 Channel
    Vds - Drain-Source Breakdown Voltage:500 V
    Rds On - Drain-Source Resistance:250 mOhms

    Manufacturer: Vishay Product Category: MOSFET RoHS: Details REACH - SVHC: Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 500 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 250 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 110 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 280 W Channel Mode: Enhancement Series: IRFB Packaging: Tube Brand: Vishay Semiconductors Configuration: Single Fall Time: 33 ns Forward Transconductance - Min: 11 S Height: 15.49 mm Length: 10.41 mm Product Type: MOSFET Rise Time: 74 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 45 ns Typical Turn-On Delay Time: 22 ns Width: 4.7 mm Unit Weight: 2 g  

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  • Delivery Time: 2 -3 weeks
  • Packaging Details: Cut tape - Reel - Box
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    MBRA160T3G - MOSFET

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    Approx. Rs 40 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Id - Continuous Drain Current180 A
    Rds On - Drain-Source Resistance:3.7 mOhms
    Qg - Gate Charge:150 nC
    Minimum Operating Temperature:- 55 C
    Mounting Style:Through Hole
    Package/Case:TO-220-3
    Vds - Drain-Source Breakdown Voltage:100 V

    Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 180 A Rds On - Drain-Source Resistance: 3.7 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.8 V Qg - Gate Charge: 150 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 370 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon Technologies Configuration: Single Height: 15.65 mm Length: 10 mm Product Type: MOSFET 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Width: 4.4 mm Unit Weight: 2 g

    Additional Information:

  • Production Capacity: Depends on order value
  • Delivery Time: 2 -3 weeks
  • Packaging Details: Cut tape - Reel - Box
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    HRLP72N06 - MOSFET

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    Approx. Rs 20 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Maximum Drain Current |Id|84 A
    Type of Control ChannelN -Channel
    Rise Time (tr)21 nS
    Maximum Gate-Threshold Voltage |Vgs(th)|2.5 V
    Type DesignatoHRLP72N06
    Maximum Drain-Source Voltage |Vds|60 V
    Maximum Gate-Source Voltage |Vgs|:20 V
    Type of TransistorMOSFET
    Maximum Junction Temperature (Tj)175 DegreeC
    Total Gate Charge (Qg)38.5 nC
    Drain-Source Capacitance (Cd)785 pF
    Maximum Power Dissipation (Pd)91 W


       Type Designator: HRLP72N06   Type of Transistor: MOSFET   Type of Control Channel: N -Channel   Maximum Power Dissipation (Pd): 91 W   Maximum Drain-Source Voltage |Vds|: 60 V   Maximum Gate-Source Voltage |Vgs|: 20 V   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V   Maximum Drain Current |Id|: 84 A   Maximum Junction Temperature (Tj): 175 °C   Total Gate Charge (Qg): 38.5 nC   Rise Time (tr): 21 nS   Drain-Source Capacitance (Cd): 785 pF   Maximum Drain-Source On-State Resistance (Rds): 0.0072 Ohm   Package: TO220

    Additional Information:

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  • Delivery Time: 2 - 3 weeks
  • Packaging Details: Cut tape - Reel - Box
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    FQP6N25 - MOSFET

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    Approx. Rs 79 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Transistor Polarity:N-Channel
    Number of Channels:1 Channel
    Vds - Drain-Source Breakdown Voltage:250 V
    Id - Continuous Drain Current:5.5 A
    Rds On - Drain-Source Resistance:1 Ohms
    Mounting Style:Through Hole
    Package/Case:TO-220-3

    Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 250 V Id - Continuous Drain Current: 5.5 A Rds On - Drain-Source Resistance: 1 Ohms Vgs - Gate-Source Voltage: - 30 V, + 30 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 63 W Channel Mode: Enhancement Packaging: Tube Brand: onsemi / Fairchild Configuration: Single Fall Time: 30 ns Forward Transconductance - Min: 2.6 S Height: 16.3 mm Length: 10.67 mm Product Type: MOSFET Rise Time: 65 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Type: MOSFET Typical Turn-Off Delay Time: 7.5 ns Typical Turn-On Delay Time: 8 ns Width: 4.7 mm Unit Weight: 2 g

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  • Delivery Time: 2- 3 weeks
  • Packaging Details: Cut tape- Reel - Box
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    STW15NK50Z - MOSFET

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    Approx. Rs 100 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Transistor Polarity:N-Channel
    Vds - Drain-Source Breakdown Voltage:500 V
    Vgs th - Gate-Source Threshold Voltage:4.5 V
    Vgs - Gate-Source Voltage:- 30 V, + 30 V
    Number of Channels:1 Channel
    Mounting Style:Through Hole
    Package/Case:TO-247-3

    Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 500 V Id - Continuous Drain Current: 14 A Rds On - Drain-Source Resistance: 340 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 76 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 160 W Channel Mode: Enhancement Series: STW15NK50Z Packaging: Tube Brand: STMicroelectronics Configuration: Single Fall Time: 15 ns Forward Transconductance - Min: 12 S Height: 20.15 mm Length: 15.75 mm Product Type: MOSFET Rise Time: 23 ns 600 Subcategory: MOSFETs Transistor Type: 1 N-Channel Type: MOSFET Typical Turn-Off Delay Time: 62 ns Typical Turn-On Delay Time: 20 ns Width: 5.15 mm Unit Weight: 6 g

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    IRF2804PBF - MOSFET

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    Approx. Rs 62 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Id - Continuous Drain Current:280 A
    Vgs - Gate-Source Voltage:- 20 V, + 20 V
    Package/Case:TO-220-3
    Vds - Drain-Source Breakdown Voltage:40 V
    Channel Mode:Enhancement
    Vgs th - Gate-Source Threshold Voltage:2 V
    Transistor Polarity:N-Channel
    Rds On - Drain-Source Resistance:2 mOhms
    Minimum Operating Temperature:- 55 C

    Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 280 A Rds On - Drain-Source Resistance: 2 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 160 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 330 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon Technologies Configuration: Single Height: 15.65 mm Length: 10 mm Product Type: MOSFET 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Width: 4.4 mm Unit Weight: 2 g

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    IPA65R380C6 MOSFET N -Channel

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    Approx. Rs 500 / PieceGet Latest Price

    Product Details:
    Voltage100 V
    ModelIPA65R380C6
    TypeIPA65R380C6 Power Diode
    ColorBlack and Silver

    Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220FP-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 650 V Id - Continuous Drain Current: 10.6 A Rds On - Drain-Source Resistance: 380 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 3.5 V Qg - Gate Charge: 39 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 31 W Channel Mode: Enhancement Tradename: CoolMOS Series: CoolMOS C6 Packaging: Tube Brand: Infineon Technologies Configuration: Single Fall Time: 11 ns Height: 16.15 mm Length: 10.65 mm Product Type: MOSFET Rise Time: 12 ns 500 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 110 nS Width: 4.85 mm Part # Aliases: IPA65R38C6XK SP000720896 IPA65R380C6XKSA1 Unit Weight: 2 g
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    NVTFS5116PLWFTAG Power MOSFET Module

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    Approx. Rs 100 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Part NumberNVTFS5116PLWFTAG
    Transistor TypeNPN
    Mounting TypeSMD
    Voltage3 V
    Gate Charge (Qg)25 nC
    Drain Source Resistance52 mOhms

    MOSFET Pwr MOSFET 60V 14A 52mOhm SGL P-CH

    Additional Information:

  • Production Capacity: DEPENDS ON ORDER VALUE
  • Delivery Time: 2 WEEKS
  • Packaging Details: Reel - Cut Tape - Mouse Reel
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    STN1HNK60T4 MOSFET

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    Approx. Rs 39 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    VoltageAbove 480
    Brand- 25 V, + 25 V
    Part NumberSTN1HNK60T4-TR
    Transistor TypeNPN
    Mounting TypeSMD
    Current400 mA
    Voltage- 25 V, + 25 V
    Gate Charge (Qg)7 nC
    Drain Source Resistance8.5 Ohms

    Case/PackageSOT-223MountSurface MountNumber of Pins3TechnicalContinuous Drain Current (ID)400 mACurrent Rating400 mADrain to Source Breakdown Voltage600 VDrain to Source Resistance8 ΩDrain to Source Voltage (Vdss)600 VElement ConfigurationSingleFall Time25 nsGate to Source Voltage (Vgs)30 VInput Capacitance156 pFMax Junction Temperature (Tj)150 °CMax Operating Temperature150 °CMax Power Dissipation3.3 WMin Operating Temperature-55 °CNominal Vgs3 VNumber of Channels1Number of Elements1PackagingCut TapePower Dissipation3.3 WRds On Max8.5 ΩResistance8.5 ΩRise Time5 nsSchedule B8541290080Threshold Voltage3 VTurn-Off Delay Time19 nsTurn-On Delay Time6.5 nsVoltage Rating (DC)600 VDimensionsHeight1.8 mmLength6.5 mmWidth3.5 mmAlso See

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  • Delivery Time: 2 weeks
  • Packaging Details: Reel-Cut Tape--Mouse Reel
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    IRF3710PBF MOSFET Transistor

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    Approx. Rs 140 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Channel TypeP Channel
    Transistor TypeNPN
    Voltage240V
    Maximum Operating Frequency50Hz

    We are engaged in offering a wide range of Indus Technologies to our clients. Our range of all products is widely appreciated by our clients

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  • Delivery Time: 2 -3 weeks
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    IRFB4020PBF -MOSFET

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    Approx. Rs 110 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Transistor Polarity:N-Channel
    Vds - Drain-Source Breakdown Voltage:200 V
    Id - Continuous Drain Current:18 A
    Qg - Gate Charge:18 nC
    Mounting Style:Through Hole
    Package/Case:TO-220-3

    Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: 100 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.8 V Qg - Gate Charge: 18 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 100 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon Technologies Configuration: Single Fall Time: 6.3 ns Forward Transconductance - Min: 24 S Height: 15.65 mm Length: 10 mm Product Type: MOSFET Rise Time: 12 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 16 ns Typical Turn-On Delay Time: 7.8 ns Width: 4.4 mm Unit Weight: 2 g

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  • Delivery Time: 2 3 weeks
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    IRFI740GPBF- MOSFET

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    Approx. Rs 50 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Rds On - Drain-Source Resistance:550 mOhms
    Vgs th - Gate-Source Threshold Voltage:4 V
    Mounting Style:Through Hole
    Package/Case:TO-220-3
    Number of Channels:1 Channel
    Vds - Drain-Source Breakdown Voltage:400 V

    Manufacturer: Vishay Product Category: MOSFET RoHS: Details REACH - SVHC: Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 400 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 550 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 63 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Channel Mode: Enhancement Series: IRF Packaging: Tube Brand: Vishay Semiconductors Configuration: Single Fall Time: 24 ns Height: 15.49 mm Length: 10.41 mm Product Type: MOSFET Rise Time: 27 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 50 ns Typical Turn-On Delay Time: 14 ns Width: 4.7 mm Part # Aliases: IRF740PBF-BE3 SIHF740-E3 Unit Weight: 2 g

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    BSS138-MOSFET SOT-23 N-CH LOGIC

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    Approx. Rs 12 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Brandonsemi / Fairchild
    Part NumberBSS138
    Transistor TypeNPN
    Mounting TypeSMD
    Current220 mA
    Linear Derating Factor3000
    Gate Charge (Qg)1.7 nC
    Drain Source Resistance3.5 Ohms

    Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package/Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 50 V Id - Continuous Drain Current: 220 mA Rds On - Drain-Source Resistance: 3.5 Ohms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.3 V Qg - Gate Charge: 1.7 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 360 mW Channel Mode: Enhancement Series: BSS138 Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: onsemi / Fairchild Configuration: Single Fall Time: 7 ns Forward Transconductance - Min: 0.12 S Height: 1.2 mm Length: 2.9 mm Product: MOSFET Small Signals Product Type: MOSFET Rise Time: 9 ns 3000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 20 ns Typical Turn-On Delay Time: 2.5 ns Width: 1.3 mm Part # Aliases: BSS138_NL Unit Weight: 8 mg

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  • Delivery Time: 2 -3 weeks
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    SI2301CDS-T1-GE3 - MOSFET

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    Approx. Rs 35 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    BrandVishay Semiconductors
    Part NumberSI2301CDS-T1-GE3
    Transistor TypePNP
    Mounting TypeSMD
    Current3.1 A
    Gate Charge (Qg)1 V
    Drain Source Resistance20 V
    Maximum Operating Temperature+ 150 C
    Maximum Power Dissipation1.6 W
    Pin Count3

    Technology: Si Mounting Style: SMD/SMT Package/Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 3.1 A Rds On - Drain-Source Resistance: 112 mOhms Vgs - Gate-Source Voltage: - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 3.3 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.6 W Channel Mode: Enhancement Tradename: TrenchFET Series: SI2 Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: Vishay Semiconductors Configuration: Single Fall Time: 10 ns Product Type: MOSFET Rise Time: 35 ns 3000 Subcategory: MOSFETs Transistor Type: 1 P-Channel Typical Turn-Off Delay Time: 30 ns Typical Turn-On Delay Time: 11 ns Part # Aliases: SI2301CDS-T1-BE3 SI2301CDS-GE3 Unit Weight: 8 mg

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  • Delivery Time: 2 -3 weeks
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    STN1HNK60 MOSFET N-Channel

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    Approx. Rs 95 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Voltage110-120 V
    BrandSTMicroelectronics
    Part NumberSTN1HNK60
    Transistor TypeNPN
    Mounting TypeSMD
    Current400 mA
    Maximum Operating Frequency- 55 C
    Maximum Operating Temperature- 55 C
    Country of OriginMade in India

      Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package/Case: SOT-223-4 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 400 mA Rds On - Drain-Source Resistance: 8.5 Ohms Vgs - Gate-Source Voltage: - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage: 2.25 V Qg - Gate Charge: 7 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.3 W Channel Mode: Enhancement Tradename: SuperMESH Series: STN1HNK60 Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: STMicroelectronics Configuration: Single Fall Time: 25 ns Height: 1.8 mm Length: 6.5 mm Product Type: MOSFET Rise Time: 5 ns 4000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 19 ns Typical Turn-On Delay Time: 6.5 ns Width: 3.5 mm Unit Weight: 250 mg

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  • Delivery Time: 2 weeks
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    2SJ177-VB - VBSEMI - MOSFET

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    Approx. Rs 350 / pieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 piece
    Forward Voltage1.4V
    Voltage110-120 V
    BrandVBsemi Elec
    Part Number2SJ177-VB
    Transistor TypePNP
    Mounting TypeDIP
    Current2.5V@250uA
    I Deal InNew Only

    The 2SJ177 parts manufactured by HITACHI are available for purchase at Jotrin Electronics. Here you can find various types and values ​​of electronic parts from the world's leading manufacturers. The 2SJ177 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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  • Delivery Time: 2 weesk
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    IXDN630CI - MOSFET DRIVER

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    Approx. Rs 100 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Mounting TypeThrough Hole
    Colorblack
    Number of Drivers:1 Driver
    Supply Voltage - Max35 V
    Configuration:Non-Inverting
    Output Current:30 A
    Package/Case:TO-220-5

    Product: MOSFET Gate Drivers Type: Low-Side Mounting Style: Through Hole Package/Case: TO-220-5 Number of Drivers: 1 Driver Number of Outputs: 1 Output Output Current: 30 A Supply Voltage - Min: 12.5 V Supply Voltage - Max: 35 V Configuration: Non-Inverting Rise Time: 11 ns Fall Time: 11 ns Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 125 C Series: IXD_630 Packaging: Tube Brand: IXYS Integrated Circuits Maximum Turn-Off Delay Time: 100 ns Maximum Turn-On Delay Time: 100 ns Operating Supply Current: 10 uA Output Voltage: 12.5 V Product Type: Gate Drivers 50 Subcategory: PMIC - Power Management ICs Technology: Si Tradename: Clare Unit Weight: 3 g

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  • Delivery Time: 2 weeks
  • Packaging Details: tray-box-bag - cut tape
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    RQK0601AGDQS - Renesas is a MOSFET

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    Approx. Rs 75 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Voltage100V
    BrandRenesas
    Part NumberRQK0601AGDQS
    Transistor TypeNPN
    Mounting TypeSMD
    Current5 A
    Gate Charge (Qg)8.9 nC
    Drain Source Resistance56 to 91 milliohm
    Maximum Operating Temperature-55 to 150 Degree C
    Maximum Power Dissipation5 W
    Pin Count4

    • Part NumberRQK0601AGDQS
    • ManufacturerRenesas
    • Description60 V, N-Channel Enhancement Mode MOSFET
    General
    • Types of MOSFETN-Channel Enhancement Mode
    • TechnologySilicon
    • Transistor PolarityN-Channel
    • Number of ChannelsSingle
    • Continous Drain Current5 A
    • Drain Source Resistance56 to 91 milliohm
    • Drain Source Breakdown Voltage60 V
    • Gate Source Voltage-20 to 20 V
    • Gate Charge8.9 nC
    • Power Dissipation5 W
    • Temperature operating range-55 to 150 Degree C
    • IndustryCommercial, Industrial
    • Package TypeThrough Hole
    • PackageUPAK
    • ApplicationsPower Switching

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  • Delivery Time: 2 - 3 week
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    STB11NM60T4 -MOSFET N-channel

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    Approx. Rs 200 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    BrandSTMicroelectronics
    Part NumberSTB11NM60T4
    Transistor TypeNPN
    Current11 A
    Gate Charge (Qg)30 nC
    Drain Source Resistance600 V
    Maximum Operating Temperature+ 150 C
    Maximum Power Dissipation160 W
    Pin Count2

    Technology: Si Mounting Style: SMD/SMT Package/Case: D2PAK-3 (TO-263-3) Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 11 A Rds On - Drain-Source Resistance: 450 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 5 V Qg - Gate Charge: 30 nC Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 160 W Channel Mode: Enhancement Tradename: MDmesh Series: STB11NM60T4 Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: STMicroelectronics Configuration: Single Fall Time: 11 ns Forward Transconductance - Min: 5.2 S Height: 4.6 mm Length: 10.4 mm Product Type: MOSFET Rise Time: 20 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Type: MOSFET Typical Turn-Off Delay Time: 6 ns Typical Turn-On Delay Time: 20 ns Width: 9.35 mm Unit Weight: 4 g

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  • Delivery Time: 2 -3 week s
  • Packaging Details: Cut tape - Reel- Box
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    IRF5305PBF - MOSFET

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    Approx. Rs 38 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Vgs th - Gate-Source Threshold Voltage:4 V
    Package/Case:TO-220-3
    Rds On - Drain-Source Resistance:60 mOhms
    Rise Time:66 ns
    Subcategory:MOSFETs
    Configuration:Single
    Forward Transconductance - Min:8 S
    Length:10 mm
    Number of Channels:1 Channel
    Vds - Drain-Source Breakdown Voltage:55 V
    Channel Mode:Enhancement
    Height:15.65 mm
    Qg - Gate Charge:42 nC
    Maximum Operating Temperature:+ 175 C

    Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 31 A Rds On - Drain-Source Resistance: 60 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 42 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon Technologies Configuration: Single Fall Time: 63 ns Forward Transconductance - Min: 8 S Height: 15.65 mm Length: 10 mm Product Type: MOSFET Rise Time: 66 ns 1000 Subcategory: MOSFETs Transistor Type: 1 P-Channel Typical Turn-Off Delay Time: 39 ns Typical Turn-On Delay Time: 14 ns Width: 4.4 mm Unit Weight: 2 g

    Additional Information:

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  • Delivery Time: 2 -3 weeks
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    IRFB4115PBF -MOSFET

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    Approx. Rs 300 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Channel TypeN Channel
    BrandInfineon Technologies
    Part NumberIRFB4115PBF
    Maximum Gate Source VoltageInfineon Technologies
    Transistor TypeNPN
    Maximum Continuous Drain Current104 A
    Mounting TypeThrough Hole
    Voltage5 V
    Maximum Drain Source Resistance9.3 mOhms

    Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 150 V Id - Continuous Drain Current: 104 A Rds On - Drain-Source Resistance: 9.3 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 5 V Qg - Gate Charge: 77 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 380 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon Technologies Configuration: Single Fall Time: 39 ns Forward Transconductance - Min: 97 S Height: 15.65 mm Length: 10 mm Product Type: MOSFET Rise Time: 73 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 41 ns Typical Turn-On Delay Time: 18 ns Width: 4.4 mm Unit Weight: 2 g

    Additional Information:

  • Production Capacity: Depends on order value
  • Delivery Time: 2 -3 weeks
  • Packaging Details: Cut tape - Tube - Box
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