Indus Technologies

Manufacturer: Toshiba Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package/Case: SOP-8 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 9 A Rds On - Drain-Source Resistance: 28 mOhms Vgs - Gate-Source Voltage: - 25 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 39 nC Minimum Operating Temperature: - Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.9 W Channel Mode: Enhancement Tradename: U-MOSVI Series: TPC8129 Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: Toshiba Configuration: Single Height: 1.68 mm Length: 4.9 mm Product Type: MOSFET 2500 Subcategory: MOSFETs Transistor Type: 1 P-Channel Width: 3.9 mm Unit Weight: 83 mg

Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package/Case: SSOT-6 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 3.6 A Rds On - Drain-Source Resistance: 75 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 9 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.6 W Channel Mode: Enhancement Series: FDC654P Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: onsemi / Fairchild Configuration: Single Fall Time: 13 ns Forward Transconductance - Min: 6 S Height: 1.1 mm Length: 2.9 mm Product: MOSFET Small Signals Product Type: MOSFET Rise Time: 13 ns 3000 Subcategory: MOSFETs Transistor Type: 1 P-Channel Type: MOSFET Typical Turn-Off Delay Time: 11 ns Typical Turn-On Delay Time: 6 ns Width: 1.6 mm Part # Aliases: FDC654P_NL Unit Weight: 36 mg

Low Gate Charge Simple Drive Requirement Fast Switching G S
Description

The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP15N03J) is available for low-profile applications.

Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current

Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range

Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Value 4.8 110 Unit /W

Data & specifications subject to change without notice
RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150oC)

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.