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Mosfet Module

Providing you the best range of tpc8129 - mosfet, fdc654p - mosfet and ap15n03h - mosfet with effective & timely delivery.

TPC8129 - MOSFET

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TPC8129 - MOSFET
  • TPC8129 - MOSFET
  • TPC8129 - MOSFET
  • TPC8129 - MOSFET
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Approx. Rs 6 / PieceGet Latest Price

Product Details:
Minimum Order Quantity100 Piece
Number Of Pins8 Pins
Vds - Drain-Source Breakdown Voltage:30 V
Transistor Polarity:P-Channel
Package/Case:SOP-8
Rds On - Drain-Source Resistance:28 mOhms
Technology:Si
Mounting Style:SMD/SMT
Number of Channels:1 Channel
Qg - Gate Charge:39 nC

Manufacturer: Toshiba Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package/Case: SOP-8 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 9 A Rds On - Drain-Source Resistance: 28 mOhms Vgs - Gate-Source Voltage: - 25 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 39 nC Minimum Operating Temperature: - Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.9 W Channel Mode: Enhancement Tradename: U-MOSVI Series: TPC8129 Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: Toshiba Configuration: Single Height: 1.68 mm Length: 4.9 mm Product Type: MOSFET 2500 Subcategory: MOSFETs Transistor Type: 1 P-Channel Width: 3.9 mm Unit Weight: 83 mg


Additional Information:

  • Production Capacity: Depends on order value
  • Delivery Time: 2 -3 weeks
  • Packaging Details: Cut tape - Reel - Box
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    FDC654P - MOSFET

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    FDC654P - MOSFET
    • FDC654P - MOSFET
    • FDC654P - MOSFET
    • FDC654P - MOSFET
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    Approx. Rs 12.54 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Technology:Si
    Maximum Operating Temperature:+ 150 C
    Number of Channels:1 Channel
    Package/Case:SSOT-6
    Transistor Polarity:P-Channel
    Rds On - Drain-Source Resistance:75 mOhms
    Minimum Operating Temperature:- 55 C

    Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package/Case: SSOT-6 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 3.6 A Rds On - Drain-Source Resistance: 75 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 9 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.6 W Channel Mode: Enhancement Series: FDC654P Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: onsemi / Fairchild Configuration: Single Fall Time: 13 ns Forward Transconductance - Min: 6 S Height: 1.1 mm Length: 2.9 mm Product: MOSFET Small Signals Product Type: MOSFET Rise Time: 13 ns 3000 Subcategory: MOSFETs Transistor Type: 1 P-Channel Type: MOSFET Typical Turn-Off Delay Time: 11 ns Typical Turn-On Delay Time: 6 ns Width: 1.6 mm Part # Aliases: FDC654P_NL Unit Weight: 36 mg

    Additional Information:

  • Production Capacity: Depends on order value
  • Delivery Time: 2 - 3weeks
  • Packaging Details: Cut tape - Reel - Box
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    AP15N03H - Mosfet

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    AP15N03H - Mosfet
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    • AP15N03H - Mosfet
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    Approx. Rs 25 / PieceGet Latest Price

    Product Details:
    Minimum Order Quantity100 Piece
    Storage Temperature Range-55 to 150
    Pulsed Drain Current150
    Operating Junction Temperature Range-55 to 150
    Low Gate Charge Simple Drive Requirement Fast Switching G S Description The TO-252 package is unive30
    Gate Threshold Voltage250
    Gate-Source Voltage20


    Low Gate Charge Simple Drive Requirement Fast Switching G S
    Description

    The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP15N03J) is available for low-profile applications.

    Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current

    Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range

    Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Value 4.8 110 Unit /W

    Data & specifications subject to change without notice
    RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
    Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150oC)

    Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance

    1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%.

    Additional Information:

  • Production Capacity: Depends on order value
  • Delivery Time: 2 -3 weeks
  • Packaging Details: Cut tape - Reel - Box
  • Yes! I am Interested

     
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