Indus Technologies

Model NO.MB10F MBFManufacturing TechnologyDiscrete DeviceMaterialElement SemiconductorTypeIntrinsic SemiconductorPackageSMDSignal ProcessingDigitalApplicationRefrigeratorModelMB10fBatch Number2021BrandJwcoTrademarkJWCOTransport PackageCartonsOriginChina

Manufacturer: Diodes Incorporated Product Category: Bridge Rectifiers RoHS: Details REACH - SVHC: Type: Single Phase Bridge Mounting Style: SMD/SMT Termination Style: Solder Pad Package/Case: DFS Peak Reverse Voltage: 1 kV Vf - Forward Voltage: 1.1 V Max Surge Current: 50 A Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Length: 8.51 mm Width: 6.5 mm Height: 3.4 mm Series: DF10 Packaging: Tube Brand: Diodes Incorporated Ir - Reverse Current: 10 uA Product Type: Bridge Rectifiers 50 Subcategory: Diodes & Rectifiers Vr - Reverse Voltage: 700 V Unit Weight: 299 mg

Manufacturer: NXP Product Category: Interface - I/O Expanders RoHS: Details Mounting Style: SMD/SMT Package/Case: SOT-340 Interface Type: I2C, Serial Number of I/Os: 16 I/O Interrupt Output: With Interrupt Supply Voltage - Min: 2.5 V Supply Voltage - Max: 5.5 V Maximum Clock Frequency: 400 kHz Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 85 C Packaging: Reel Packaging: Cut Tape Packaging: MouseReel ESD Protection: Without ESD Protection Brand: NXP Semiconductors Product Type: I/O Expanders 1000 Subcategory: Interface ICs
Unit Weight: 173.400 mg

We are engaged in offering a wide range of Indus Technologiesto our clients. Our range of all products is widely appreciated by our clients

Rectifiers 2A 1000V 150ns GP

Manufacturer: IXYS Product Category: Discrete Semiconductor Modules RoHS: Details Product: Power MOSFET Modules Type: Polar HiPerFET Power MOSFET Technology: Si Vgs - Gate-Source Voltage: - 30 V, + 30 V Mounting Style: Screw Mount Package/Case: SOT-227-4 Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Series: IXFN82N60 Packaging: Tube Brand: IXYS Configuration: Single Fall Time: 24 ns Height: 12.22 mm Id - Continuous Drain Current: 72 A Length: 38.23 mm Number of Channels: 1 Channel Pd - Power Dissipation: 1.04 kW Product Type: Discrete Semiconductor Modules Rds On - Drain-Source Resistance: 75 mOhms Rise Time: 23 ns 10 Subcategory: Discrete Semiconductor Modules Tradename: HiPerFET Transistor Polarity: N-Channel Typical Turn-Off Delay Time: 79 ns Typical Turn-On Delay Time: 28 ns Vds - Drain-Source Breakdown Voltage: 600 V Vgs th - Gate-Source Threshold Voltage: 5 V Width: 25.42 mm Unit Weight: 30 g

Diode TypeSingle PhaseTechnologyStandardVoltage - Peak Reverse (Max)600 VCurrent - Average Rectified (Io)500 mAVoltage - Forward (Vf) (Max) @ If1 V @ 400 mACurrent - Reverse Leakage @ Vr5 µA @ 600 VOperating Temperature-55°C ~ 150°C (TJ)Mounting TypeSurface MountPackage / CaseTO-269AA, 4-BESOPSupplier Device PackageMBS-1Base Product NumberMB6