Industrial MOSFET

TBD139 TO126 12.5W - Transistor

₹ 35.00 / Piece Get Latest Price

Channel Type	N Channel
Brand	STMicroelectronics
Part Number	Through Hole
Transistor Type	NPN
Current	1.5 A
Voltage	80 V

Minimum order quantity: 100 Piece

Bipolar Transistors - BJT NPN Silicon Trnsistr

Manufacturer	CDIL
Type of transistor	NPN
Polarisation	bipolar
Collector-emitter voltage	80V
Collector current	1.5A
Power dissipation	12.5W
Case	TO126
Current gain	40...250
Mounting	THT
Kind of package	tube

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IRF830PBF - MOSFET

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₹ 110 / Piece Get Latest Price

Voltage	100V
Brand	Vishay Semiconductors
Part Number	IRF530PBF
Transistor Type	NPN
Mounting Type	DIP
Current	14 A
Gate Charge (Qg)	- 20 V, + 20 V
Drain Source Resistance	100 V
Maximum Operating Temperature	+ 175 C
Maximum Power Dissipation	88 W
Pin Count	3

Minimum order quantity: 100 Piece

Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 14 A Rds On - Drain-Source Resistance: 160 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 26 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 88 W Channel Mode: Enhancement Series: IRF Packaging: Tube Brand: Vishay Semiconductors Configuration: Single Fall Time: 24 ns Product Type: MOSFET Rise Time: 34 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 23 ns Typical Turn-On Delay Time: 10 ns Part # Aliases: IRF530PBF-BE3 IRF520SPBF Unit Weight: 2 g

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HFS5N65SA - Transister Mosfet

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₹ 45 / Piece Get Latest Price

Channel Type	N Channel
Part Number	HFS5N65S
Transistor Type	NPN
Mounting Type	Through hole
Current	4.2 A
Voltage	650 V
Maximum Gate Source Voltage	30 V
Maximum Continuous Drain Current	4.2 A
Maximum Drain Source Resistance	2.9 Ohm
Maximum Operating Temperature	150 DegreeC
Pin Count	4

Minimum order quantity: 100 Piece

Type Designator: HFS5N65S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 33 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 4.2 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 10.5 nC
Rise Time (tr): 45 nS
Drain-Source Capacitance (Cd): 60 pF
Maximum Drain-Source On-State Resistance (Rds): 2.9 Ohm

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IRF3710PBF MOSFET Transistor

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₹ 140 / Piece Get Latest Price

Channel Type	P Channel
Transistor Type	NPN
Voltage	240V
Maximum Operating Frequency	50Hz

Minimum order quantity: 100 Piece

We are engaged in offering a wide range of Indus Technologies to our clients. Our range of all products is widely appreciated by our clients

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IRFB4020PBF -MOSFET

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₹ 110 / Piece Get Latest Price

Number Of Pins	4 Pin
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	18 A
Qg - Gate Charge:	18 nC

Minimum order quantity: 100 Piece

Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: 100 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.8 V Qg - Gate Charge: 18 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 100 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon Technologies Configuration: Single Fall Time: 6.3 ns Forward Transconductance - Min: 24 S Height: 15.65 mm Length: 10 mm Product Type: MOSFET Rise Time: 12 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 16 ns Typical Turn-On Delay Time: 7.8 ns Width: 4.4 mm Unit Weight: 2 g

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IRFI740GPBF- MOSFET

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₹ 50 / Piece Get Latest Price

Number Of Pins	6 Pin
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	400 V
Rds On - Drain-Source Resistance:	550 mOhms
Vgs th - Gate-Source Threshold Voltage:	4 V

Minimum order quantity: 100 Piece

Manufacturer: Vishay Product Category: MOSFET RoHS: Details REACH - SVHC: Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 400 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 550 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 63 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Channel Mode: Enhancement Series: IRF Packaging: Tube Brand: Vishay Semiconductors Configuration: Single Fall Time: 24 ns Height: 15.49 mm Length: 10.41 mm Product Type: MOSFET Rise Time: 27 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 50 ns Typical Turn-On Delay Time: 14 ns Width: 4.7 mm Part # Aliases: IRF740PBF-BE3 SIHF740-E3 Unit Weight: 2 g

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IRFP4227PBF MOSFET Module

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₹ 315 / Piece Get Latest Price

Brand	Infineon Technologies
Part Number	IRFP4227PBF
Transistor Type	NPN
Mounting Type	through hole
Current	330 W
Voltage	220-240 V,- 30 V, + 30 V
Gate Charge (Qg)	70 NC
Drain Source Resistance	200 V
Maximum Operating Temperature	+ 175 C
Maximum Power Dissipation	330 W
Pin Count	3

Minimum order quantity: 100 Piece

Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 65 A Rds On - Drain-Source Resistance: 25 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 1.8 V Qg - Gate Charge: 70 nC Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 330 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon Technologies Configuration: Single Fall Time: 31 ns Forward Transconductance - Min: 49 S Height: 20.7 mm Length: 15.87 mm Product Type: MOSFET Rise Time: 20 ns 400 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 21 ns Typical Turn-On Delay Time: 33 ns Width: 5.31 mm Unit Weight: 6 g

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AOD409 -PNP MOSFET

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₹ 150 / Piece Get Latest Price

Mounting Type	SMD
Usage/Application	Electronics
Type	Non-Leaded
Manufacturer	Alpha & Omega Semiconductor Inc.
Model No	AOD409
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	+-20V
Power Dissipation (Max)	2.5W (Ta), 60W (Tc)
Operating Temperature	-55 DegreeC ~ 175 DegreeC (TJ)
Colour	Black

Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	40mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 60W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252 (DPAK)

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TK10A80E, S4X- MOSFET

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₹ 65 / Piece Get Latest Price

Usage/Application	Electronics
Type	Non-Leaded
Country of Origin	Made in India
Model No	TK10A80E,S4X
Packaging Type	Box
Colour	Black
Manufracturer	Toshiba Semiconductor and Storage
Type Of Mounting	Through Hole
Operating Temperature	150 DegreeC (TJ)
Power Dissipation (Max)	50W (Tc)
Drain to Source Voltage (Vdss)	800 V
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel

MOSFET PLN MOS 800V 1000m (VGS=10V) TO-220SIS

Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220FP-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	800 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	700 mOhms
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	46 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	50 W
Channel Mode:	Enhancement
Tradename:	MOSVIII
Series:	TK10A80E
Packaging:	Tube
Brand:	Toshiba
Configuration:	Single
Fall Time:	35 ns
Height:	15 mm
Length:	10 mm
Product Type:	MOSFET
Rise Time:	40 ns

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BSS138-MOSFET SOT-23 N-CH LOGIC

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₹ 12 / Piece Get Latest Price

Brand	onsemi / Fairchild
Part Number	BSS138
Transistor Type	NPN
Mounting Type	SMD
Current	220 mA
Linear Derating Factor	3000
Gate Charge (Qg)	1.7 nC
Drain Source Resistance	3.5 Ohms

Minimum order quantity: 100 Piece

Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package/Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 50 V Id - Continuous Drain Current: 220 mA Rds On - Drain-Source Resistance: 3.5 Ohms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.3 V Qg - Gate Charge: 1.7 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 360 mW Channel Mode: Enhancement Series: BSS138 Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: onsemi / Fairchild Configuration: Single Fall Time: 7 ns Forward Transconductance - Min: 0.12 S Height: 1.2 mm Length: 2.9 mm Product: MOSFET Small Signals Product Type: MOSFET Rise Time: 9 ns 3000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 20 ns Typical Turn-On Delay Time: 2.5 ns Width: 1.3 mm Part # Aliases: BSS138_NL Unit Weight: 8 mg

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IRF3205SPBF -MOSFET MODULE

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₹ 35 / Piece Get Latest Price

Usage/Application	Electronics
Type	Non-Leaded
Model No	IRF3205SPBF
Packaging Type	Box
Colour	Black
Manufracturer	Infineon Technologies
FET Type	N-Channel
Drain to Source Voltage (Vdss)	55 V
Vgs (Max)	+-20V
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55 DegreeC ~ 175 DegreeC (TJ)
Type Of Mounting	Surface Mount

N-Channel 55 V 110A (Tc) 200W (Tc) Surface Mount D2PAK

MOSFET N-CH 55V 110A D2PAK

Product Status	Discontinued at Digi-Key
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8mOhm @ 62A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	146 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3247 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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STP80NF55 MOSFET LGS LV MOSFET

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₹ 200 / Piece Get Latest Price

Usage/Application	Electronics
Type	Non-Leaded
Model No	STP80NF55
Colour	Black
Packaging Type	Box
Type Of Mounting	Through Hole
Manufacturer	ST Microelectronics
Operating Tempracture	-40 DegreeC ~ 85 DegreeC (TA)

MOSFET N-CH 55V 80A TO220AB

N-Channel 55 V 80A (Tc) 300W (Tc) Through Hole TO-220

FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3850 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	STP80

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BSH111BKR - SMD MOSFET

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₹ 25 / Piece Get Latest Price

Mounting Type	SMD
Usage/Application	Electronics
Type	Non-Leaded
Manufacturer	Nexperia USA Inc.
Model No	BSH111BKR
Fet Type	N-Channel
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25 DegreeC	210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Gate Charge (Qg) (Max) @ Vgs	0.5 nC @ 4.5 V
Vgs (Max)	+-10V
Power Dissipation (Max)	302mW (Ta)
Operating Temperature	-55 DegreeC ~ 150 DegreeC (TJ)

N-Channel 55 V 210mA (Ta) 302mW (Ta) Surface Mount TO-236AB

FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Max) @ Id, Vgs	4Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id	1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	0.5 nC @ 4.5 V
Vgs (Max)	±10V
Input Capacitance (Ciss) (Max) @ Vds	30 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	302mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB
Package / Case	TO-236-3, SC-59, SOT-23-3
Base Product Number	BSH111

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STW13NK100Z - POWER MOSFET

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₹ 75 / Piece Get Latest Price

Brand	ST
Part Number	STW11NK100Z STW13NK100Z
Transistor Type	NPN
Mounting Type	Through hole
Current	13 A
Linear Derating Factor	2.7
Gate Charge (Qg)	-/+ 30
Drain Source Resistance	0.56
Maximum Operating Temperature	300
Pin Count	3

Minimum order quantity: 100 Piece

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

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RQJ0303PGDQA - MOSFET Power MOSFET

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₹ 15 / Piece Get Latest Price

Brand	Renesas Electronics
Part Number	RQJ0303PGDQA#H6
Mounting Type	SMD
Pin Count	2
Mounting Style:	SMD/SMT
Package/Case:	SC-59-3
Brand:	Renesas Electronics
Height:	1.4 mm
Length:	1.5 mm
Moisture Sensitive:	Yes
Subcategory:	MOSFETs
Width:	2.95 mm
Unit Weight:	6 mg

Minimum order quantity: 100 Piece

Manufacturer: Renesas Electronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package/Case: SC-59-3 Packaging: Reel Packaging: Cut Tape Brand: Renesas Electronics Height: 1.4 mm Length: 1.5 mm Moisture Sensitive: Yes Product Type: MOSFET 3000 Subcategory: MOSFETs Width: 2.95 mm Unit Weight: 6 mg

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IRF5305PBF - MOSFET

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₹ 38 / Piece Get Latest Price

Number of Channels:	1 Channel
Package/Case:	TO-220-3
Vds - Drain-Source Breakdown Voltage:	55 V
Rds On - Drain-Source Resistance:	60 mOhms
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	42 nC
Maximum Operating Temperature:	+ 175 C
Channel Mode:	Enhancement
Configuration:	Single
Forward Transconductance - Min:	8 S
Height:	15.65 mm
Length:	10 mm
Rise Time:	66 ns
Subcategory:	MOSFETs

Minimum order quantity: 100 Piece

Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 31 A Rds On - Drain-Source Resistance: 60 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 42 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 110 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon Technologies Configuration: Single Fall Time: 63 ns Forward Transconductance - Min: 8 S Height: 15.65 mm Length: 10 mm Product Type: MOSFET Rise Time: 66 ns 1000 Subcategory: MOSFETs Transistor Type: 1 P-Channel Typical Turn-Off Delay Time: 39 ns Typical Turn-On Delay Time: 14 ns Width: 4.4 mm Unit Weight: 2 g

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HRLP72N06 - MOSFET

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₹ 20 / Piece Get Latest Price

Type Designato	HRLP72N06
Type of Transistor	MOSFET
Type of Control Channel	N -Channel
Maximum Power Dissipation (Pd)	91 W
Maximum Drain-Source Voltage \|Vds\|	60 V
Maximum Gate-Source Voltage \|Vgs\|:	20 V
Maximum Gate-Threshold Voltage \|Vgs(th)\|	2.5 V
Maximum Drain Current \|Id\|	84 A
Maximum Junction Temperature (Tj)	175 DegreeC
Total Gate Charge (Qg)	38.5 nC
Rise Time (tr)	21 nS
Drain-Source Capacitance (Cd)	785 pF

Minimum order quantity: 100 Piece

Type Designator: HRLP72N06 Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 91 W Maximum Drain-Source Voltage |Vds|: 60 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V Maximum Drain Current |Id|: 84 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 38.5 nC Rise Time (tr): 21 nS Drain-Source Capacitance (Cd): 785 pF Maximum Drain-Source On-State Resistance (Rds): 0.0072 Ohm Package: TO220

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FQP6N25 - MOSFET

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₹ 79 / Piece Get Latest Price

Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	250 V
Id - Continuous Drain Current:	5.5 A
Rds On - Drain-Source Resistance:	1 Ohms

Minimum order quantity: 100 Piece

Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 250 V Id - Continuous Drain Current: 5.5 A Rds On - Drain-Source Resistance: 1 Ohms Vgs - Gate-Source Voltage: - 30 V, + 30 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 63 W Channel Mode: Enhancement Packaging: Tube Brand: onsemi / Fairchild Configuration: Single Fall Time: 30 ns Forward Transconductance - Min: 2.6 S Height: 16.3 mm Length: 10.67 mm Product Type: MOSFET Rise Time: 65 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Type: MOSFET Typical Turn-Off Delay Time: 7.5 ns Typical Turn-On Delay Time: 8 ns Width: 4.7 mm Unit Weight: 2 g

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STW15NK50Z - MOSFET

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₹ 100 / Piece Get Latest Price

Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V

Minimum order quantity: 100 Piece

Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 500 V Id - Continuous Drain Current: 14 A Rds On - Drain-Source Resistance: 340 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 4.5 V Qg - Gate Charge: 76 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 160 W Channel Mode: Enhancement Series: STW15NK50Z Packaging: Tube Brand: STMicroelectronics Configuration: Single Fall Time: 15 ns Forward Transconductance - Min: 12 S Height: 20.15 mm Length: 15.75 mm Product Type: MOSFET Rise Time: 23 ns 600 Subcategory: MOSFETs Transistor Type: 1 N-Channel Type: MOSFET Typical Turn-Off Delay Time: 62 ns Typical Turn-On Delay Time: 20 ns Width: 5.15 mm Unit Weight: 6 g

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IRF2804PBF - MOSFET

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₹ 62 / Piece Get Latest Price

Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	280 A
Rds On - Drain-Source Resistance:	2 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Minimum Operating Temperature:	- 55 C
Channel Mode:	Enhancement

Minimum order quantity: 100 Piece

Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 280 A Rds On - Drain-Source Resistance: 2 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2 V Qg - Gate Charge: 160 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 330 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon Technologies Configuration: Single Height: 15.65 mm Length: 10 mm Product Type: MOSFET 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Width: 4.4 mm Unit Weight: 2 g

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MIC5233-5.0YM5-TR - Regulator IC

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₹ 22 / Piece Get Latest Price

Mounting Style:	SMD/SMT
Package/Case:	SOT-23-5
Number of Outputs:	1 Output
Polarity:	Positive
Input Voltage, Min:	2.3 V
Qualification:	AEC-Q100
Maximum Operating Temperature:	+ 125 C
Brand:	Microchip Technology

Minimum order quantity: 100 Piece

Manufacturer: Microchip Product Category: LDO Voltage Regulators RoHS: Details Mounting Style: SMD/SMT Package/Case: SOT-23-5 Output Voltage: 5 V Output Current: 100 mA Number of Outputs: 1 Output Polarity: Positive Quiescent Current: 1.8 uA Input Voltage, Min: 2.3 V Input Voltage, Max: 36 V Output Type: Fixed Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 125 C Dropout Voltage: 270 mV Qualification: AEC-Q100 Series: MIC5233 Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: Microchip Technology Dropout Voltage - Max: 450 mV Line Regulation: 0.04 % Load Regulation: 0.25 % Product Type: LDO Voltage Regulators 3000 Subcategory: PMIC - Power Management ICs Tolerance: 2 % Part # Aliases: MIC5233-5.0YM5 TR Unit Weight: 45 mg

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MAX232N - Interface IC

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₹ 110 / Piece Get Latest Price

Mounting Style:	Through Hole
Package/Case:	PDIP-16
Data Rate:	120 kb/s
Number of Drivers:	2 Driver
Number of Receivers:	2 Receiver
Supply Voltage - Max:	5.5 V
Supply Voltage - Min:	4.5 V
Maximum Operating Temperature:	+ 85 C

Minimum order quantity: 100 Piece

Manufacturer: Texas Instruments Product Category: RS-232 Interface IC RoHS: Details Mounting Style: Through Hole Package/Case: PDIP-16 Series: MAX232 Function: Transceiver Data Rate: 120 kb/s Number of Drivers: 2 Driver Number of Receivers: 2 Receiver Duplex: Full Duplex Supply Voltage - Max: 5.5 V Supply Voltage - Min: 4.5 V Operating Supply Current: 10 mA Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 85 C ESD Protection: ESD Protection Packaging: Tube Brand: Texas Instruments Height: 4.57 mm Length: 19.3 mm Operating Supply Voltage: 5 V Product: RS-232 Transceivers Product Type: RS-232 Interface IC 25 Subcategory: Interface ICs Supply Type: Single Supply Width: 6.35 mm Unit Weight: 1 g

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NVTFS5116PLWFTAG Power MOSFET Module

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₹ 100 / Piece Get Latest Price

Part Number	NVTFS5116PLWFTAG
Transistor Type	NPN
Mounting Type	SMD
Voltage	3 V
Gate Charge (Qg)	25 nC
Drain Source Resistance	52 mOhms

Minimum order quantity: 100 Piece

MOSFET Pwr MOSFET 60V 14A 52mOhm SGL P-CH

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STN1HNK60T4 MOSFET

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₹ 39 / Piece Get Latest Price

Voltage	Above 480
Brand	- 25 V, + 25 V
Part Number	STN1HNK60T4-TR
Transistor Type	NPN
Mounting Type	SMD
Current	400 mA
Voltage	- 25 V, + 25 V
Gate Charge (Qg)	7 nC
Drain Source Resistance	8.5 Ohms

Minimum order quantity: 100 Piece

Case/PackageSOT-223MountSurface MountNumber of Pins3TechnicalContinuous Drain Current (ID)400 mACurrent Rating400 mADrain to Source Breakdown Voltage600 VDrain to Source Resistance8 ΩDrain to Source Voltage (Vdss)600 VElement ConfigurationSingleFall Time25 nsGate to Source Voltage (Vgs)30 VInput Capacitance156 pFMax Junction Temperature (Tj)150 °CMax Operating Temperature150 °CMax Power Dissipation3.3 WMin Operating Temperature-55 °CNominal Vgs3 VNumber of Channels1Number of Elements1PackagingCut TapePower Dissipation3.3 WRds On Max8.5 ΩResistance8.5 ΩRise Time5 nsSchedule B8541290080Threshold Voltage3 VTurn-Off Delay Time19 nsTurn-On Delay Time6.5 nsVoltage Rating (DC)600 VDimensionsHeight1.8 mmLength6.5 mmWidth3.5 mmAlso See

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IPA65R380C6 MOSFET N -Channel

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₹ 500 / Piece Get Latest Price

Voltage	100 V
Model	IPA65R380C6
Type	IPA65R380C6 Power Diode
Color	Black and Silver

Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220FP-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 650 V Id - Continuous Drain Current: 10.6 A Rds On - Drain-Source Resistance: 380 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 3.5 V Qg - Gate Charge: 39 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 31 W Channel Mode: Enhancement Tradename: CoolMOS Series: CoolMOS C6 Packaging: Tube Brand: Infineon Technologies Configuration: Single Fall Time: 11 ns Height: 16.15 mm Length: 10.65 mm Product Type: MOSFET Rise Time: 12 ns 500 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 110 nS Width: 4.85 mm Part # Aliases: IPA65R38C6XK SP000720896 IPA65R380C6XKSA1 Unit Weight: 2 g

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STB11NM60T4 -MOSFET N-channel

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₹ 200 / Piece Get Latest Price

Brand	STMicroelectronics
Part Number	STB11NM60T4
Transistor Type	NPN
Current	11 A
Gate Charge (Qg)	30 nC
Drain Source Resistance	600 V
Maximum Operating Temperature	+ 150 C
Maximum Power Dissipation	160 W
Pin Count	2

Minimum order quantity: 100 Piece

Technology: Si Mounting Style: SMD/SMT Package/Case: D2PAK-3 (TO-263-3) Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 11 A Rds On - Drain-Source Resistance: 450 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 5 V Qg - Gate Charge: 30 nC Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 160 W Channel Mode: Enhancement Tradename: MDmesh Series: STB11NM60T4 Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: STMicroelectronics Configuration: Single Fall Time: 11 ns Forward Transconductance - Min: 5.2 S Height: 4.6 mm Length: 10.4 mm Product Type: MOSFET Rise Time: 20 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Type: MOSFET Typical Turn-Off Delay Time: 6 ns Typical Turn-On Delay Time: 20 ns Width: 9.35 mm Unit Weight: 4 g

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SI2301CDS-T1-GE3 - MOSFET

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₹ 35 / Piece Get Latest Price

Brand	Vishay Semiconductors
Part Number	SI2301CDS-T1-GE3
Transistor Type	PNP
Mounting Type	SMD
Current	3.1 A
Gate Charge (Qg)	1 V
Drain Source Resistance	20 V
Maximum Operating Temperature	+ 150 C
Maximum Power Dissipation	1.6 W
Pin Count	3

Minimum order quantity: 100 Piece

Technology: Si Mounting Style: SMD/SMT Package/Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 3.1 A Rds On - Drain-Source Resistance: 112 mOhms Vgs - Gate-Source Voltage: - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 3.3 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 1.6 W Channel Mode: Enhancement Tradename: TrenchFET Series: SI2 Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: Vishay Semiconductors Configuration: Single Fall Time: 10 ns Product Type: MOSFET Rise Time: 35 ns 3000 Subcategory: MOSFETs Transistor Type: 1 P-Channel Typical Turn-Off Delay Time: 30 ns Typical Turn-On Delay Time: 11 ns Part # Aliases: SI2301CDS-T1-BE3 SI2301CDS-GE3 Unit Weight: 8 mg

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2SJ177-VB - VBSEMI - MOSFET

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₹ 350 / piece Get Latest Price

Forward Voltage	1.4V
Voltage	110-120 V
Brand	VBsemi Elec
Part Number	2SJ177-VB
Transistor Type	PNP
Mounting Type	DIP
Current	2.5V@250uA
I Deal In	New Only

Minimum order quantity: 100 piece

The 2SJ177 parts manufactured by HITACHI are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic parts from the world's leading manufacturers. The 2SJ177 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.

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IRF740APBF - MOSFET

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₹ 195 / Piece Get Latest Price

Channel Type	N Channel
Brand	Vishay Semiconductors
Part Number	IRF740APBF
Maximum Gate Source Voltage	+ 30 V
Transistor Type	NPN
Maximum Continuous Drain Current	10 A
Mounting Type	Through Hole
Current	10 A
Voltage	4 V
Maximum Drain Source Resistance	550 mOhms

Minimum order quantity: 100 Piece

Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 400 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 550 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 36 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 125 W Channel Mode: Enhancement Series: IRF Packaging: Tube Brand: Vishay Semiconductors Configuration: Single Fall Time: 22 ns Product Type: MOSFET Rise Time: 35 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 24 ns Typical Turn-On Delay Time: 10 ns Part # Aliases: IRF740APBF-BE3 Unit Weight: 2 g

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RQK0601AGDQS - Renesas is a MOSFET

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₹ 75 / Piece Get Latest Price

Voltage	100V
Brand	Renesas
Part Number	RQK0601AGDQS
Transistor Type	NPN
Mounting Type	SMD
Current	5 A
Gate Charge (Qg)	8.9 nC
Drain Source Resistance	56 to 91 milliohm
Maximum Operating Temperature	-55 to 150 Degree C
Maximum Power Dissipation	5 W
Pin Count	4

Minimum order quantity: 100 Piece

Part NumberRQK0601AGDQS
ManufacturerRenesas
Description60 V, N-Channel Enhancement Mode MOSFET

General

Types of MOSFETN-Channel Enhancement Mode
TechnologySilicon
Transistor PolarityN-Channel
Number of ChannelsSingle
Continous Drain Current5 A
Drain Source Resistance56 to 91 milliohm
Drain Source Breakdown Voltage60 V
Gate Source Voltage-20 to 20 V
Gate Charge8.9 nC
Power Dissipation5 W
Temperature operating range-55 to 150 Degree C
IndustryCommercial, Industrial
Package TypeThrough Hole
PackageUPAK
ApplicationsPower Switching

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IXDN630CI - MOSFET DRIVER

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₹ 100 / Piece Get Latest Price

Mounting Type	Through Hole
Color	black
Configuration:	Non-Inverting
Package/Case:	TO-220-5
Number of Drivers:	1 Driver
Output Current:	30 A
Supply Voltage - Max	35 V

Minimum order quantity: 100 Piece

Product: MOSFET Gate Drivers Type: Low-Side Mounting Style: Through Hole Package/Case: TO-220-5 Number of Drivers: 1 Driver Number of Outputs: 1 Output Output Current: 30 A Supply Voltage - Min: 12.5 V Supply Voltage - Max: 35 V Configuration: Non-Inverting Rise Time: 11 ns Fall Time: 11 ns Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 125 C Series: IXD_630 Packaging: Tube Brand: IXYS Integrated Circuits Maximum Turn-Off Delay Time: 100 ns Maximum Turn-On Delay Time: 100 ns Operating Supply Current: 10 uA Output Voltage: 12.5 V Product Type: Gate Drivers 50 Subcategory: PMIC - Power Management ICs Technology: Si Tradename: Clare Unit Weight: 3 g

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IRFB4115PBF -MOSFET

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₹ 300 / Piece Get Latest Price

Channel Type	N Channel
Brand	Infineon Technologies
Part Number	IRFB4115PBF
Maximum Gate Source Voltage	Infineon Technologies
Transistor Type	NPN
Maximum Continuous Drain Current	104 A
Mounting Type	Through Hole
Voltage	5 V
Maximum Drain Source Resistance	9.3 mOhms

Minimum order quantity: 100 Piece

Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 150 V Id - Continuous Drain Current: 104 A Rds On - Drain-Source Resistance: 9.3 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 5 V Qg - Gate Charge: 77 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 380 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon Technologies Configuration: Single Fall Time: 39 ns Forward Transconductance - Min: 97 S Height: 15.65 mm Length: 10 mm Product Type: MOSFET Rise Time: 73 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 41 ns Typical Turn-On Delay Time: 18 ns Width: 4.4 mm Unit Weight: 2 g

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STN1HNK60 MOSFET N-Channel

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₹ 95 / Piece Get Latest Price

Voltage	110-120 V
Brand	STMicroelectronics
Part Number	STN1HNK60
Transistor Type	NPN
Mounting Type	SMD
Current	400 mA
Maximum Operating Frequency	- 55 C
Maximum Operating Temperature	- 55 C
Country of Origin	Made in India

Minimum order quantity: 100 Piece

Manufacturer: STMicroelectronics Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package/Case: SOT-223-4 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 400 mA Rds On - Drain-Source Resistance: 8.5 Ohms Vgs - Gate-Source Voltage: - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage: 2.25 V Qg - Gate Charge: 7 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 3.3 W Channel Mode: Enhancement Tradename: SuperMESH Series: STN1HNK60 Packaging: Reel Packaging: Cut Tape Packaging: MouseReel Brand: STMicroelectronics Configuration: Single Fall Time: 25 ns Height: 1.8 mm Length: 6.5 mm Product Type: MOSFET Rise Time: 5 ns 4000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 19 ns Typical Turn-On Delay Time: 6.5 ns Width: 3.5 mm Unit Weight: 250 mg

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IRFB260NPBF - MOSFET

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₹ 131 / Piece Get Latest Price

Voltage	220V
Brand	Infineon Technologies
Part Number	IRFB260NPBF
Transistor Type	NPN
Mounting Type	THROUGH HOLE
Current	56 A
Gate Charge (Qg)	150 nC
Drain Source Resistance	40 mOhms

Minimum order quantity: 100 Piece

Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200 V Id - Continuous Drain Current: 56 A Rds On - Drain-Source Resistance: 40 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.8 V Qg - Gate Charge: 150 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 380 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon Technologies Configuration: Single Fall Time: 50 ns Forward Transconductance - Min: 29 S Height: 15.65 mm Length: 10 mm Product Type: MOSFET Rise Time: 64 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 52 ns Typical Turn-On Delay Time: 17 ns Width: 4.4 mm Unit Weight: 2 g

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IRFB20N50KPBF - MOSFET

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₹ 201 / Piece Get Latest Price

Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Rds On - Drain-Source Resistance:	250 mOhms
Vgs - Gate-Source Voltage: - 30	- 30 V, + 30 V
Maximum Operating Temperature:	+ 150 C

Minimum order quantity: 100 Piece

Manufacturer: Vishay Product Category: MOSFET RoHS: Details REACH - SVHC: Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 500 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 250 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 110 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 280 W Channel Mode: Enhancement Series: IRFB Packaging: Tube Brand: Vishay Semiconductors Configuration: Single Fall Time: 33 ns Forward Transconductance - Min: 11 S Height: 15.49 mm Length: 10.41 mm Product Type: MOSFET Rise Time: 74 ns 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 45 ns Typical Turn-On Delay Time: 22 ns Width: 4.7 mm Unit Weight: 2 g

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MBRA160T3G - MOSFET

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₹ 40 / Piece Get Latest Price

Mounting Style:	Through Hole
Package/Case:	TO-220-3
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current	180 A
Rds On - Drain-Source Resistance:	3.7 mOhms
Qg - Gate Charge:	150 nC
Minimum Operating Temperature:	- 55 C

Minimum order quantity: 100 Piece

Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 180 A Rds On - Drain-Source Resistance: 3.7 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1.8 V Qg - Gate Charge: 150 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 370 W Channel Mode: Enhancement Packaging: Tube Brand: Infineon Technologies Configuration: Single Height: 15.65 mm Length: 10 mm Product Type: MOSFET 1000 Subcategory: MOSFETs Transistor Type: 1 N-Channel Width: 4.4 mm Unit Weight: 2 g

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